Speech theme:

Research Progress of Micro-LED Display Technologies

Speech summary:

Gallium nitride (GaN) based semiconductors and Micro-LED chips, which have attracted great attentions from academic and industrial communities. It is due to their applications in large area high resolution TV display, wearable consumer electronics, automotive display, VR/AR virtual enhanced display and so on. At present, Micro-LED display technology still faces some main scientific and technical problems, such as the accuracy of mass transfer process, the lack of efficient red-light sources and the efficiency droop of LED chips so on.In order to research and solve above problems, we have achieved high efficiency and low droop effect nitride-based Micro-LED devices, even for amber/red emission with wavelength up to 630nm. Secondly, hybrid micro/nano-structured light-emitting diode (LED) integrated with III-nitride/quantum dots(QDs) has been developed. The 3D monolithic ultra-high-resolution Micro-LED displays driven by large-area CVD MoS2 thin-film transistors(TFTs) and prototypical 32×32 active-matrix (AM) displays at 1270 PPI resolution have been realized and demonstrated. In summary, these achieved materials and devices could give a promising way for comprehensive applications of high-resolution full-color display, transparent display, visible light communication and so on.